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參數(shù)資料
| 型號： | APT5012 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS V是一個高電壓N新一代通道增強型功率MOSFET。 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | APT5012 |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
APT5012WVR
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
200
100
50
10
5
1
.5
.1
20
16
12
8
4
0
0
OPERATION HERE
LIMITED BY R
DS
(ON)
TJ =+150
°
C
TJ =+25
°
C
Crss
1
5
10
50 100
500
.01
.1
1
10
50
0
100
200
300
400
500
0
0.4
0.8
1.2
1.6
2.0
Coss
Ciss
30,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
VDS=250V
VDS=100V
VDS=400V
I
D
= I
D
[Cont.]
10
μ
S
1mS
10mS
100mS
DC
100
μ
S
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
TO-267 Package Outline
5.00 (.197) BSC
1.80 (.071)
1.25 (.049)
20.45 (.805)
20.20 (.795)
4.19 (.165)
3.95 (.156)
Drain
Source
Gate
1.65 (.065)
1.40 (.055)
Dia. Typ.
3 Leads
20.32 (.800)
20.07 (.790)
19.05 (.750)
12.70 (.500)
24.15 (.951)
23.60 (.929)
10.23 (.403)
10.10 (.398)
Dimensions in Millimeters and (Inches)
4.20 (.165) BSC
7.40 (.291)
6.60 (.260)
16.90 (.665)
16.40 (.646)
相關PDF資料 |
PDF描述 |
|---|---|
| APT5012JN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT5014B2VFR | POWER MOS V FREDFET |
| APT5014LVFR | POWER MOS V FREDFET |
| APT5014B2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5014SFLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT5012JN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT5012JNU2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 43A I(D) |
| APT5012JNU3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 43A I(D) |
| APT5012LNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 42A I(D) | TO-264AA |
| APT5012WVR | 制造商:Microsemi Corporation 功能描述:APT5012WVR - Bulk |
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