- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36715 > APT5017SVFR 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APT5017SVFR |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 63K |
| 代理商： | APT5017SVFR |
050-7403
Rev
D
2-2004
TJ = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
TYPICAL PERFORMANCE CURVES
TC=-55°C
TC=125°C
TC=25°C
VCE=480V
VCE=300V
VCE=120V
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 40A
TJ = 25°C
TJ = -55°C
TJ = 125°C
TC=-55°C
TC=25°C
TC=125°C
250s PULSE TEST
<0.5 % DUTY CYCLE
BV
CES
,
COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
VOLTAGE
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
APT40GP60B_S
80
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
3.5
3
2.5
2
1.5
1
0.5
0
180
160
140
120
100
80
60
40
20
0
IC= 80A
IC= 40A
IC= 20A
IC= 40A
IC= 80A
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125
150
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
80
70
60
50
40
30
20
10
0
250
200
150
100
50
0
3.5
3
2.5
2
1.5
1
0.5
0
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT5017SVFR | 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5017SVFRG | 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5017BVFR | 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT5017BVFR | 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT5017BVRG | 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT5017SVFRG | 功能描述:MOSFET N-CH 500V 30A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT5017SVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5017SVRG | 功能描述:MOSFET N-CH 500V 30A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT5018BFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
| APT5018BFLL_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。