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參數(shù)資料
| 型號： | APT5020BVFRG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | APT5020BVFRG |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
1
5
10
50 100
500
.01
.1
1
10
50
0
50
100
150
200
250
300
0
0.4
0.8
1.2
1.6
2.0
APT5020BVFR
TC =+25°C
TJ =+150°C
SINGLE PULSE
200
100
50
10
5
1
.5
.1
20
16
12
8
4
0
20,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
050-5527
Rev
C
OPERATION HERE
LIMITED BY RDS (ON)
10
S
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
VDS=250V
VDS=100V
VDS=400V
1mS
10mS
100mS
DC
100
S
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
I
D
= I
D
[Cont.]
TO-247 Package Outline
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT5020BVFR | 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5020BVFR | 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5020BVR | 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5020BVR | 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5020BVRG | 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT5020BVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5020BVRG | 功能描述:MOSFET N-CH 500V 26A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT5020DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | CHIP |
| APT5020HJN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 500V V(BR)DSS | 28A I(D) |
| APT5020JN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 28A I(D) |
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