- 您現(xiàn)在的位置：買賣IC網 > PDF目錄366569 > APT5020SLC (Advanced Power Technology Ltd.) Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. PDF資料下載
參數資料
| 型號： | APT5020SLC |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS VITM是一種低柵極電荷新一代高壓N溝道增強型功率MOSFET。 |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | APT5020SLC |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
D
(
-50
-25
0
25
50
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
,
R
D
(
I
D
,
(
V
0
50
100
150
200
250
0
2
4
6
8
10
0
2
4
6
8
0
20
40
60
80
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
75
100
125 150
-50
-25
0
25
50
75
100
125
150
APT5020SVR
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
50
40
30
20
10
0
1.8
1.6
1.4
1.2
1.0
0.8
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
0
50
40
30
20
10
0
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
0
VD250
μ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
TJ = -55
°
C
TJ = +125
°
C
TJ = +25
°
C
TJ = -55
°
C
TJ = +125
°
C
5.5V
5V
4.5V
4V
VGS=6V, 7V, 10V & 15V
6V
5.5V
5V
4.5V
4V
VGS=15V
VGS=7V & 10V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
相關PDF資料 |
PDF描述 |
|---|---|
| APT5020SVFR | 24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| APT5020SVR | 24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| APT5020BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5022AVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5022BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT5020SN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-263AB |
| APT5020SVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5020SVFRG | 功能描述:MOSFET N-CH 500V 26A D3PAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT5020SVR | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 26A 3-Pin(2+Tab) D3PAK |
| APT5020SVRG | 功能描述:MOSFET N-CH 500V 26A D3PAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復。