參數(shù)資料
型號: APT5024SFLL
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 22 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D3PAK-3
文件頁數(shù): 4/5頁
文件大?。?/td> 164K
代理商: APT5024SFLL
050-7131
Rev
C
1-2005
APT5024BFLL_SFLL
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
89
10
1
16
12
8
4
0
10,000
5,000
1,000
100
10
200
100
10
1
10
100
500
0
10
20
30
40
50
0
10
20
30
40
50
60
70
80
0.3
0.5
0.7
0.9
1.1
1.3
1.5
TJ=+150°C
TJ=+25°C
VDS=250V
VDS=100V
VDS=400V
I
D = 22A
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
10mS
1mS
100S
Crss
Coss
Ciss
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 333V
R
G = 5
T
J = 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
V
DD = 333V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
V
DD = 333V
R
G = 5
T
J = 125°C
L = 100H
0
10
20
30
40
0
10
20
30
40
0
102030
40
0
5
10 15 20 25 30
35 40 45 50
V
DD = 333V
I
D = 22A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
40
30
20
10
0
500
400
300
200
100
0
50
40
30
20
10
0
500
400
300
200
100
0
相關(guān)PDF資料
PDF描述
APT5024BFLLG 22 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT5024BFLL 22 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT5024SFLLG 22 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
APT5024SLL 22 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
APT5024SLLG 22 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
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參數(shù)描述
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