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參數(shù)資料
| 型號： | APT50GF60BR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Thin Film RF/Microwave Capacitor; Capacitance:3.3pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C |
| 中文描述： | 該快速IGBT是一種高壓IGBT的新一代。 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 82K |
| 代理商： | APT50GF60BR |
0
APT50GF60BR
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8, Typical V
CE
(SAT) Voltage vs Junction Temperature
B
C
,
-50
-25
0
25
T
C
, CASE TEMPERATURE (
°
C)
Figure 9, Maximum Collector Current vs Case Temperature
T
, JUNCTION TEMPERATURE (
°
C)
Figure 10, Breakdown Voltage vs Junction Temperature
R
, GATE RESISTANCE (OHMS)
Figure 11, Typical Switching Energy Losses vs Gate Resistance
T
, JUNCTION TEMPERATURE (
°
C)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
I
, COLLECTOR CURRENT (AMPERES)
Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (KHz)
Figure 14, Typical Load Current vs Frequency
I
C1
0.5 I
C2
I
C2
I
C1
E
on
E
off
E
on
E
off
0.5 I
C2
I
C2
For Both:
Duty Cycle = 50%
T
J
= +125
°
C
T
= +90
°
C
Gate drive as specified
Power dissapation = 83W
I
LOAD
= I
RMS
of fundamental
S
T
V
C
(
V
S
S
S
I
C
,
V
CC
= 0.66 V
CES
V
GE
= +15V
T
J
= +125
°
C
R
G
= 10
V
CC
= 0.66 V
CES
V
GE
= +15V
R
G
= 10
-50 -25
0
25
50
75
100 125 150
25
50
75
100
125
150
50
75
100 125 150
0
20
40
60
80
100
-50 -25
0
25
50
75
100 125 150
0
10
20
30
40
50
0.1
1.0
10
100
1000
80
60
40
20
0
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0
V
CC
= 0.66 V
CES
V
GE
= +15V
T
J
= +25
°
C
I
C
= I
C2
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
0.8
0.7
20
10
5
1
0.5
100
10
1
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GF60HR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60JCU2 | 制造商:Microsemi Corporation 功能描述:Microsemi APT50GF60JCU2 IGBTs |
| APT50GF60JU2 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT50GF60JU3 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT50GF60LRD | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
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