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參數(shù)資料
| 型號： | APT50GN120B2 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 134 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | T-MAX, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 190K |
| 代理商： | APT50GN120B2 |
050-7602
Rev
C
10-2005
APT50GN120B2(G)
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
SCSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
V
GE = 15V
V
CE = 600V
I
C = 50A
T
J = 150°C, RG = 2.2
7
, V
GE =
15V, L = 100H,V
CE = 1200V
VCC = 960V, VGE = 15V,
T
J = 125°C, RG = 2.2
7
Inductive Switching (25°C)
V
CC = 800V
V
GE = 15V
I
C = 50A
R
G = 2.2
7
T
J = +25°C
Inductive Switching (125°C)
V
CC = 800V
V
GE = 15V
I
C = 50A
R
G = 2.2
7
T
J = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
MIN
TYP
MAX
3600
210
170
9.5
315
20
190
150
10
28
27
320
115
TBD
3900
4495
28
27
395
205
TBD
5660
6795
UNIT
pF
V
nC
A
s
ns
J
ns
J
UNIT
°C/W
gm
MIN
TYP
MAX
.23
N/A
5.9
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
RθJC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G is external gate resistance, not including RGint nor gate driver impedance.
8 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specications and information contained herein.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| APT50GN120B2G | 功能描述:IGBT 1200V 134A 543W TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT50GN120L2DQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT50GN120L2DQ2G | 功能描述:IGBT 1200V 134A 543W TO264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT50GN60B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GN60BDQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
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