- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36717 > APT50GN60SDQ3(G) (MICROSEMI POWER PRODUCTS GROUP) 107 A, 600 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | APT50GN60SDQ3(G) |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 107 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, D3PAK-3 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 241K |
| 代理商： | APT50GN60SDQ3(G) |
050-7635
Rev
A
1-201
1
APT50GN60B_SDQ3(G)
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 110°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 60A
Forward Voltage
I
F = 120A
I
F = 60A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.0
2.44
1.7
APT50GN60B_SDQ3(G)
60
94
600
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
26
-
35
-
45
-
4
-
175
-
680
-
8
-
100
-
1380
-
26
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 60A, diF/dt = -200A/μs
V
R = 400V, TC = 25°C
I
F = 60A, diF/dt = -200A/μs
V
R = 400V, TC = 125°C
I
F = 60A, diF/dt = -1000A/μs
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
Z
θ
JC
,
THERMAL
IMPED
ANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
D = 0.9
TYPICAL PERFORMANCE CURVES
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT50GN60BDQ3(G) | 107 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50GN60SDQ3 | 107 A, 600 V, N-CHANNEL IGBT |
| APT50GN60BDQ3 | 107 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50GP60B2DQ2G | 150 A, 600 V, N-CHANNEL IGBT |
| APT50GP60B2DQ2 | 150 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GN60SG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GP60B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60B2DF2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60B2DQ2 | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60B2DQ2G | 功能描述:IGBT 600V 150A 625W TMAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。