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參數(shù)資料
| 型號(hào)： | APT50GT120LR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 94 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 196K |
| 代理商： | APT50GT120LR |
Typical Performance Curves
APT50GT120B2R_LR(G)
052-6270
Rev
D
9-2008
0
20
40
60
80
100
120
10 20 30 40
50 60 70 80 90 100
0
0.05
0. 1
0.15
0. 2
0.25
10-5
10-4
10-3
10-2
10-1
1.0
10
100
1000
5000
0
100
200
300
400
500
600
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
F
MAX
,OPERA
TING
FREQUENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J = 125°C
T
C = 75°C
D = 50 %
V
CE = 800V
R
G = 1.0Ω
0.5
0.1
0.05
F
max
= min (f
max, f max2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - P cond
E
on2 + E off
f
max2 =
P
diss =
T
J - T C
R θJC
C
oes
C
res
C
ies
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
75°C
100°C
0.0487
0.151
0.00909
0.389
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
C,
CAP
ACIT
ANCE
(pF)
0
20
40
60
80
100
120
140
0
200 400
600 800 1000 1200 1400
160
V
CE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
I C
,COLLECT
OR
CURRENT
(A)
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| APT50GT120JRDQ2 | 72 A, 1200 V, N-CHANNEL IGBT |
| APT50GT120JRDQ2 | 72 A, 1200 V, N-CHANNEL IGBT |
| APT50GT120JU2 | 75 A, 1200 V, N-CHANNEL IGBT |
| APT50GT120JU3 | 75 A, 1200 V, N-CHANNEL IGBT |
| APT50GT120JU3 | 75 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GT120LRDQ2G | 功能描述:IGBT 1200V 106A 694W TO264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT50GT120LRG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT60BR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
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