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參數(shù)資料
| 型號(hào)： | APT50GT60BRG |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Thunderbolt IGBT |
| 中文描述： | IGBT的霹靂 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 419K |
| 代理商： | APT50GT60BRG |
0
APT50GT60BR_SR(G)
TYPICAL PERFORMANCE CURVES
160
V
GE
= 15V
V
G
,
V
C
,
I
C
,
I
C
,
(
I
C
D
V
C
,
V
G
,
I
C
,
250μs PULSE
TEST<0.5 % DUTY
CYCLE
140
120
100
80
60
40
10
0
160
140
120
100
80
60
40
20
0
5
4
3
2
1
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J
= 25°C)
1
2
3
4
5
0
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T
J
= 125°C)
5
10
15
20
0
2
4
6
8
10
12
0
50
100
150 200
250
6
8
10
12
14
16
0
25
T
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
50
75
100
125
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
200
180
160
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
160
140
120
100
80
60
40
20
0
T
J
= 125°C
T
J
= 25°C
T
J
= 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
V
= 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
T
J
= 125°C
T
J
= 25°C
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
GATE CHARGE (nC)
FIGURE 4, Gate Charge
V
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
T
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
T
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
I
C
= 25A
I
C
= 50A
I
C
= 100A
I
C
= 25A
I
C
= 50A
I
C
= 100A
T
J
= -55°C
15V
11V
10V
9V
13V
8V
7V
6V
T
J
= -55°C
I
C
= 50A
T
J
= 25°C
V
CE
= 480V
V
CE
= 300V
V
CE
= 120V
Limited
Lead Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GT60SR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60SRG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
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| APT50M38JFLL_04 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS 7 R FREDFET |
| APT50M38JLL | 功能描述:MOSFET N-CH 500V 88A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
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