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參數(shù)資料
| 型號： | APT50GT60SR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 220K |
| 代理商： | APT50GT60SR |
052-6273
Re
v
C
6-2008
APT50GT60BR_SR(G)
TYPICAL PERFORMANCE CURVES
V
GS(TH)
,
THRESHOLD
V
OL
TA
GE
V
CE
,COLLECT
OR-T
O-EMITTER
V
OL
TA
GE
(V)
I C
,COLLECT
OR
CURRENT
(A)
I C
,COLLECT
OR
CURRENT
(A)
(NORMALIZED)
I C,
DC
COLLECT
OR
CURRENT(A)
V
CE
,COLLECT
OR-T
O-EMITTER
V
OL
TA
GE
(V)
V
GE
,GA
TE-T
O-EMITTER
V
OL
TA
GE
(V)
I C
,COLLECT
OR
CURRENT
(A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
160
140
120
100
80
60
40
10
0
160
140
120
100
80
60
40
20
0
5
4
3
2
1
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
1
2
3
4
5
0
5
10
15
20
0
2
4
6
8
10
12
0
50
100
150
200
250
6
8
10
12
14
16
0
25
50
75
100
125
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
200
180
160
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
160
140
120
100
80
60
40
20
0
T
J = 125°C
T
J = 25°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
J = 125°C
T
J = 25°C
V
GE = 15V
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE1,OutputCharacteristics(T
J =25°C)
FIGURE2,OutputCharacteristics(T
J =125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE3,TransferCharacteristics
FIGURE4,GateCharge
V
GE,GATE-TO-EMITTERVOLTAGE(V)
T
J,JunctionTemperature(°C)
FIGURE5,OnStateVoltagevsGate-to-EmitterVoltage
FIGURE6,OnStateVoltagevsJunctionTemperature
T
J,JUNCTIONTEMPERATURE(°C)
T
C,CASETEMPERATURE(°C)
FIGURE7,ThresholdVoltagevs.JunctionTemperature
FIGURE8,DCCollectorCurrentvsCaseTemperature
I
C = 25A
I
C = 50A
I
C = 100A
I
C = 25A
I
C = 50A
I
C = 100A
T
J = -55°C
15V
11V
10V
9V
13V
8V
7V
6V
T
J = -55°C
I
C = 50A
T
J = 25°C
V
CE = 480V
V
CE = 300V
V
CE = 120V
LeadTemperature
Limited
LeadTemperature
Limited
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