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參數(shù)資料
| 型號(hào)： | APT50M50JLL |
| 元件分類： | JFETs |
| 英文描述： | 71 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 155K |
| 代理商： | APT50M50JLL |
APT50M50JLL
050-7116
Rev
B
3-2004
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
Crss
Ciss
Coss
VDS=250V
VDS=100V
VDS=400V
TJ=+150°C
TJ=+25°C
1
10
100
500
0
10
20
30
40
50
0
50
100
150
200
250
300
0.3
0.5
0.7
0.9
1.1
1.3
1.5
10mS
1mS
100S
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
I
D = 71A
356
100
10
1
16
12
8
4
0
30,000
10,000
1,000
100
10
200
100
10
1
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 333V
R
G = 3
T
J = 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
0
5
10 15 20 25 30 35 40 45 50
V
DD = 333V
I
D = 71A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
120
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0
V
DD = 333V
R
G = 3
T
J = 125°C
L = 100H
V
DD = 333V
R
G = 3
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
160
140
120
100
80
60
40
20
0
7000
6000
5000
4000
3000
2000
1000
0
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