- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄36719 > APT53N60SC6 (MICROSEMI POWER PRODUCTS GROUP) 53 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APT53N60SC6 |
| 廠(chǎng)商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 53 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大小： | 149K |
| 代理商： | APT53N60SC6 |
Figure 17, Turn-on Switching Waveforms and Denitions
Figure 18, Turn-off Switching Waveforms and Denitions
IC
D.U.T.
APT30DF60
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
Figure 19, Inductive Switching Test Circuit
T
J = 125°C
Collector Current
Collector Voltage
Gate Voltage
5%
10%
t
d(on)
90%
10%
t
r
5%
Switching Energy
T
J = 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
t
d(off)
10%
t
f
90%
050-7206
Rev
B
8-2010
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
Typical Performance Curves
APT53N60B_SC6
D
3PAK Package Outline
TO-247 (B) Package Outline
e3 100% Sn Plated
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
APT30DQ60
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT54H50L | 54 A, 500 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT54H50B2 | 54 A, 500 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB |
| APT5510B2FLL | 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5510B2FLLG | 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5510LFLL | 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT54GA60B | 功能描述:IGBT 600V 96A 416W TO-247 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT54GA60BD30 | 功能描述:IGBT 600V 96A 416W TO247 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT54GA60S | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT54GA60SD30 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT55-101DN | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 17.5A I(D) | CHIP |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。