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參數(shù)資料
| 型號： | APT5518SFLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 31 A, 550 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 94K |
| 代理商： | APT5518SFLL |
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
On State Drain Current 2 (V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance 2
(V
GS
= 10V, 15.5A)
Zero Gate Voltage Drain Current (V
DS
= 550V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 440V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
050-7197
Rev
A
3-2003
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
550
31
0.180
250
1000
±100
35
APT5518
550
31
124
±30
±40
403
3.23
-55 to 150
300
31
30
1300
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
TO-247
D3PAK
BFLL
SFLL
APT5518BFLL
APT5518SFLL
550V 31A 0.180
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
TO-247 or Surface Mount D3PAK Package
FAST RECOVERY BODY DIODE
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7
R
FREDFET
相關PDF資料 |
PDF描述 |
|---|---|
| APT5518SFLLG | 31 A, 550 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5518SFLL | 31 A, 550 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5518BFLL | 31 A, 550 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT5518BFLL | 31 A, 550 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT551R3BN-GULLWING | 7.5 A, 550 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT551R2AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 7A I(D) | TO-3 |
| APT551R2BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 8A I(D) | TO-247AD |
| APT551R2DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 8A I(D) | CHIP |
| APT551R3AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 6.5A I(D) | TO-3 |
| APT551R3BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 7.5A I(D) | TO-247AD |
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