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| 型號： | APT5531SFLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 19 A, 550 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 93K |
| 代理商： | APT5531SFLL |
DYNAMIC CHARACTERISTICS
APT5531BFLL - SFLL
050-7223
Rev
A
3-2003
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -19A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -19A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -19A, di/dt = 100A/s)
Peak Recovery Current
(IS = -19A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
19
76
1.3
15
Tj = 25°C
250
Tj = 125°C
400
Tj = 25°C
1.9
Tj = 125°C
6
Tj = 25°C
15
Tj = 125°C
26
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.47
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 5.32mH, RG = 25, Peak IL = 19A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
19A di
/dt ≤ 700A/s V
R ≤
V
DSS
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 275V
I
D
= 19A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 275V
I
D
= 19A @ 25°C
R
G
= 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 367V, V
GS
= 15V
I
D
= 19A, R
G
= 5
INDUCTIVE SWITCHING @ 125°C
V
DD
= 367V V
GS
= 15V
I
D
= 19A, R
G
= 5
MIN
TYP
MAX
1811
365
26
42
12
25
11
8
27
7
156
76
283
84
UNIT
pF
nC
ns
J
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.50
0.40
0.30
0.20
0.10
0
0.5
0.1
0.3
0.7
0.9
0.05
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| APT5540DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | CHIP |
| APT5540HN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 16.5A I(D) | TO-258ISO |
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