- 您現(xiàn)在的位置：買賣IC網 > PDF目錄362387 > APT5560CN TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 10.5A I(D) | TO-254ISO PDF資料下載
參數(shù)資料
| 型號： | APT5560CN |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 10.5A I(D) | TO-254ISO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 550V五（巴西）直| 10.5AI（四）|對254ISO |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 38K |
| 代理商： | APT5560CN |
0
15.49 (.610)
5.38 (.212)
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
Gate
1.01 (.040)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
Drain
Source
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
D
19.51 (.768)
19.81 (.780)
25.48 (1.003)
2.29 (.090)
0.762.79 (.110)
3.18 (.125)
3.10 (.122)
4.60 (.181)
1.80 (.071)
2.59 (.102)
0.48 (.019)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
D
2.29 (.090)
5.79 (.228)
5.45 (.215) BSC
2-Plcs.
T-MAX
TM
(B2) Package Outline
TO-264 (L) Package Outline
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
ADVANCE TECHNICAL
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
INFORMATION
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Fall Time
APT5513B2FLL - LFLL
TYP
MAX
4355
835
58
105
26
47
14
11
30
7
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Peak Diode Recovery
dv
/
dt 5
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
GS
= 10V
DD
= 0.5 V
DSS
= I
D
[Cont.] @ 25°C
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 0.6
MIN
UNIT
pF
nC
ns
MIN
TYP
MAX
41
164
1.3
15
250
500
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
2.16
5.57
15.5
22.4
THERMAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JA
MIN
TYP
MAX
0.25
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25°C, L = 1.90mH, R
G
=
25
, Peak I
L
= 41A
5 dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
≤
-
I
D
[
Cont.
]
di
/
dt
≤
700A/μs
V
R
≤
V
DSS
T
J
≤
150
°
C
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關PDF資料 |
PDF描述 |
|---|---|
| APT5570AN | TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 10.5A I(D) | TO-3 |
| APT5570BN | TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 12A I(D) | TO-247AD |
| APT5570CN | TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 9.5A I(D) | TO-254ISO |
| APT55GF60BN | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 55A I(C) | TO-247 |
| APT55M50JFLL | Volts:550V RDS(ON)0.05Ohms ID(cont):77Amps|FREDFETs ( fast body diode) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT5560DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | CHIP |
| APT5570AN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT-MODE HIGH VOLTAGE POWER MOSFETS |
| APT5570BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 12A I(D) | TO-247AD |
| APT5570CN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 9.5A I(D) | TO-254ISO |
| APT55GF60BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 55A I(C) | TO-247 |
發(fā)布緊急采購，3分鐘左右您將得到回復。