- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36720 > APT55M85LFLLG (MICROSEMI POWER PRODUCTS GROUP) 59 A, 550 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA PDF資料下載
參數(shù)資料
| 型號： | APT55M85LFLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 59 A, 550 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 70K |
| 代理商： | APT55M85LFLLG |
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
On State Drain Current 2 (V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance 2
(V
GS
= 10V, 29.5A)
Zero Gate Voltage Drain Current (V
DS
= 550V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 440V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
050-7231
Rev
A
3-2003
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
550
59
0.085
250
1000
±100
35
APT55M85
550
59
236
±30
±40
694
5.56
-55 to 150
300
59
50
3000
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
T-MAX
G
D
S
TO-264
B2FLL
LFLL
APT55M85B2FLL
APT55M85LFLL
550V 59A 0.085
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular T-MAX or TO-264 Package
FAST RECOVERY BODY DIODE
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7
R
FREDFET
相關PDF資料 |
PDF描述 |
|---|---|
| APT56H50J | 56 A, 500 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT58M50JCU3 | 58 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6010B2FLL | 54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6010B2FLLG | 54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6010LFLL | 54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT55M90BFN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 550V V(BR)DSS | 63A I(D) |
| APT55M90DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | CHIP |
| APT56F50B2 | 功能描述:MOSFET N-CH 500V 56A TO-247 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT56F50B2_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel FREDFET |
| APT56F50L | 功能描述:MOSFET N-CH 500V 56A TO-264 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復。