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參數(shù)資料
| 型號(hào)： | APT58M50JCU3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 58 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | APT58M50JCU3 |
APT58M50JCU3
APT
58M
50JCU3
–
Rev
0
Septem
b
er
,2009
www.microsemi.com
2- 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VDS = 500V
VGS = 0V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 42A
65
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
4
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
10800
Coss
Output Capacitance
1164
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
148
pF
Qg
Total gate Charge
340
Qgs
Gate – Source Charge
75
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 42A
155
nC
Td(on)
Turn-on Delay Time
60
Tr
Rise Time
70
Td(off)
Turn-off Delay Time
155
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 333V
ID = 42A
RG = 2.2Ω
50
ns
SiC chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
100
400
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 175°C
200
2000
A
IF
DC Forward Current
Tc = 100°C
20
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 20A
Tj = 175°C
2
2.4
V
QC
Total Capacitive Charge
IF = 20A, VR = 300V
di/dt =800A/s
28
nC
f = 1MHz, VR = 200V
130
C
Total Capacitance
f = 1MHz, VR = 400V
100
pF
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
Mosfet
0.23
RthJC
Junction to Case Thermal Resistance
SiC Diode
1.35
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG
Storage Temperature Range
-40
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT58M50JU2 | 功能描述:POWER MOD MOSFET 500V 58A SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT58M50JU3 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - MOSFET - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 500V 58A SOT-227 |
| APT58M80J | 功能描述:MOSFET N-CH 800V 58A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT58M80J_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel MOSFET |
| APT58MJ50J | 功能描述:MOSFET N-CH 500V 58A ISOTOP 制造商:microsemi corporation 系列:POWER MOS 8?? 包裝:管件 零件狀態(tài):初步 FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:500V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:58A（Tc） 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:10V 不同 Id 時(shí)的 Vgs（th）（最大值）:5V @ 2.5mA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:340nC @ 10V Vgs（最大值）:±30V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:13500pF @ 25V FET 功能:- 功率耗散（最大值）:540W（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:65 毫歐 @ 42A，10V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:底座安裝 供應(yīng)商器件封裝:ISOTOP? 封裝/外殼:SOT-227-4，miniBLOC 標(biāo)準(zhǔn)包裝:1 |
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