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參數(shù)資料
| 型號： | APT6010B2LL |
| 元件分類： | JFETs |
| 英文描述： | 54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 165K |
| 代理商： | APT6010B2LL |
DYNAMIC CHARACTERISTICS
APT6010B2LL_LLL
050-7051
Rev
E
9-2004
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.20
0.16
0.12
0.08
0.04
0
0.5
0.1
0.3
0.7
0.9
0.05
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -54A)
Reverse Recovery Time (I
S = -54A, dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -54A, dlS/dt = 100A/s)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
54
216
1.3
790
18
8
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.18
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 54A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 300V
I
D = 54A @ 25°C
R
G = 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 54A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V VGS = 15V
I
D = 54A, RG = 5
MIN
TYP
MAX
6710
1250
90
150
30
75
12
19
34
9
885
970
1150
1220
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.06mH, RG = 25, Peak IL = 54A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID54A
di/dt ≤ 700A/s V
R ≤ 600V
T
J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT6010B2LLG | 功能描述:MOSFET N-CH 600V 54A T-MAX RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT6010JFLL | 功能描述:MOSFET N-CH 600V 47A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT6010JLL | 功能描述:MOSFET N-CH 600V 47A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT6010LFLL | 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APT6010LFLLG | 功能描述:MOSFET N-CH 600V 54A TO-264 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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