參數(shù)資料
型號(hào)： APT6010JFLL
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 47 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOTOP-4
文件頁數(shù)： 4/5頁
文件大小： 166K
代理商： APT6010JFLL
APT40GP90JDF2
050-7482
Rev
B
8-2004
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
T
J = 125°C,VGE =15V
T
J = 25°C,VGE =15V
VCE = 600V
RG = 5
L = 100 H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
VCE = 600V
VGE = +15V
TJ = 125°C
R
G = 5, L = 100
H, VCE = 600V
R
G = 5, L = 100
H, VCE = 600V
VCE=600V
TJ = 25°C, TJ =125°C
RG = 5
L = 100 H
VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
VCE = 600V
VGE = +15V
RG = 5
VCE = 600V
VGE = +15V
RG = 5
VCE = 600V
VGE = +15V
RG = 5
10
20
30
40
50
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70
80
90
10
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90
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90
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90
10
20
30
40
50
60
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80
90
0
10
20
30
40
50
0
25
50
75
100
125
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
120
100
80
60
40
20
0
140
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
Eon2, 80A
Eoff, 80A
Eon2, 40A
Eoff, 40A
Eon2, 20A
Eoff, 20A
25
20
15
10
5
0
70
60
50
40
30
20
10
0
6000
5000
4000
3000
2000
1000
0
8000
7000
6000
5000
4000
3000
2000
1000
0
Eon2,80A
Eoff, 40A
Eon2,40A
Eoff,80A
Eon2,20A
Eoff,20A
相關(guān)PDF資料
PDF描述
APT6010LLL 54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT6010B2LL 54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6010B2LLG 54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT6010JLL 功能描述:MOSFET N-CH 600V 47A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:*
APT6010LFLL 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR
APT6010LFLLG 功能描述:MOSFET N-CH 600V 54A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT6010LLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6010LLLG 功能描述:MOSFET N-CH 600V 54A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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