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參數(shù)資料
| 型號(hào)： | APT6017LFLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 165K |
| 代理商： | APT6017LFLLG |
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7061
Rev
C
9-2004
APT6017B2FLL_LFLL
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
Drain Current
DrainVoltage
GateVoltage
T
J125°C
Switching Energy
10%
t
d(on)
90%
5%
t
r
5%
10%
Drain Current
DrainVoltage
GateVoltage
T
J125°C
10%
0
t
d(off)
90%
t
f
90%
ID
D.U.T.
VDS
Figure 20, Inductive Switching Test Circuit
VDD
G
APT30DF60
Switching Energy
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6017B2FLL | 35 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6017LFLL | 35 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT6017B2FLLG | 35 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6017LLLG | 35 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT6017LLL | 35 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6017LLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6017LLLG | 功能描述:MOSFET N-CH 600V 35A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT6017WVR | 制造商:Microsemi Corporation 功能描述:APT6017WVR - Bulk |
| APT6018JN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6018LNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 35A I(D) | TO-264AA |
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