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參數(shù)資料
| 型號： | APT6017LLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 164K |
| 代理商： | APT6017LLLG |
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
5
10
15
20
25
30
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
160
140
120
100
80
60
40
20
0
40
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
8V
5.5V
6V
6.5V
7V
VGS =15 &10V
7.5V
Typical Performance Curves
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
050-7060
Rev
B
8-2004
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT6017B2LL_LLL
NORMALIZED TO
V
GS = 10V @ ID = 17.5A
I
D = 17.5A
V
GS = 10V
0.0230
0.108
0.111
0.0067F
0.00995F
0.187F
Power
(watts)
Junction
temp. (
°C)
RC MODEL
Case temperature. (
°C)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6017LLL | 35 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT6017B2LLG | 35 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6017B2LL | 35 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6017LLL | 35 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT6017B2LL | 35 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6017WVR | 制造商:Microsemi Corporation 功能描述:APT6017WVR - Bulk |
| APT6018JN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6018LNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 35A I(D) | TO-264AA |
| APT601R2AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7A I(D) | TO-3 |
| APT601R2BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 8A I(D) | TO-247AD |
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