參數(shù)資料
型號： APT6028HLL
元件分類： JFETs
英文描述： 18 A, 600 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
封裝： HERMETIC SEALED, TO-258, 3 PIN
文件頁數(shù)： 5/5頁
文件大?。?/td> 89K
代理商： APT6028HLL
APT6028HLL
050-7336
Rev
-
3-2003
Figure 19, Turn-off Switching Waveforms and Definitions
90%
t
d(off)
Gate Voltage
Drain Voltage
Drain Current
90%
t
f
10%
Switching Energy
T
J
= 125 C
Figure 18, Turn-on Switching Waveforms and Definitions
10 %
t
d(on)
Drain Current
Drain Voltage
Gate Voltage
90%
10 %
t
r
5 %
Switching Energy
T
J
= 125 C
IC
D.U.T.
APT15DF60B
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
TO-258 Package Outline
5.08 (.200) BSC
1.14 (.045)
0.88 (.035)
17.65 (.695)
17.39 (.685)
4.19 (.165)
3.94 (.155)
Drain
Source
Gate
1.65 (.065)
1.39 (.055)
Dia. Typ.
3 Leads
17.96 (.707)
17.70 (.697)
19.05 (0.750)
12.70 (0.500)
21.21 (.835)
20.70 (.815)
8.89 (.350)
8.63 (.340)
Dimensions in Millimeters and (Inches)
3.56 (.140) BSC
6.86 (.270)
6.09 (.240)
13.84 (.545)
13.58 (.535)
相關(guān)PDF資料
PDF描述
APT6029BFLL 21 A, 600 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT6029BFLL 21 A, 600 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT6029SFLLG 21 A, 600 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6029SFLL 21 A, 600 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6029SFLL 21 A, 600 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT6029BFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6029BFLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6029BFLLG 功能描述:MOSFET N-CH 600V 21A TO-247 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件
APT6029BLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6029BLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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