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參數(shù)資料
| 型號： | APT6030SVFR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS V是一個高電壓N新一代通道增強型功率MOSFET。 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 149K |
| 代理商： | APT6030SVFR |
0
DYNAMIC CHARACTERISTICS
APT6030BVFR_SVFR
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Symbol
I
S
I
SM
V
SD
dv
/
dt
THERMAL CHARACTERISTICS
Symbol
Characteristic
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -21A)
Peak Diode Recovery
dv
/
dt 5
Reverse Recovery Time
(I
S
= -21A,
di
/
dt
= 100A/μs)
Reverse Recovery Charge
(I
S
= -21A,
di
/
dt
= 100A/μs)
Peak Recovery Current
(I
S
= -21A,
di
/
dt
= 100A/μs)
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
MIN
TYP
MAX
21
84
1.3
15
250
525
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
1.5
5.5
13
23
R
θ
JC
R
θ
JA
MIN
TYP
MAX
0.42
40
UNIT
°C/W
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
4 Starting T
j
=
+25°C, L = 5.90mH, R
G
=
25
, Peak I
L
= 21A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
≤
-
I
D
21A
di
/
dt
≤
700A/μs
V
R
≤
600V
T
J
≤
150
°
C
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 300V
I
D
= 21A @ 25°C
V
GS
= 15V
V
DD
= 300V
I
D
= 21A @ 25°C
R
G
= 1.6
MIN
TYP
MAX
3750
430
160
150
18
60
12
10
47
8
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Z
θ
J
,
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6030SVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6030 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6030BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6030BVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6030BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6030SVFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT6030SVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6030SVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT6032AVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6033BN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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