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參數(shù)資料
| 型號(hào)： | APT6030SVFR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 21 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 144K |
| 代理商： | APT6030SVFR |
050-5944
Rev
A
1-2005
DYNAMIC CHARACTERISTICS
APT6030BVFR_SVFR
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -21A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -21A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -21A, di/dt = 100A/s)
Peak Recovery Current
(IS = -21A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
21
84
1.3
15
Tj = 25°C
250
Tj = 125°C
525
Tj = 25°C
1.5
Tj = 125°C
5.5
Tj = 25°C
13
Tj = 125°C
23
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.42
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 5.90mH, RG = 25, Peak IL = 21A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID21A
di/dt ≤ 700A/s V
R ≤600V
T
J ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 21A @ 25°C
V
GS = 15V
V
DD = 300V
I
D = 21A @ 25°C
R
G = 1.6
MIN
TYP
MAX
3750
430
160
150
18
60
12
10
47
8
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6030SVFRG | 21 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6030SVR | 21 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6030BVRG | 21 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6030SVRG | 21 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6030SVR | 21 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6030SVFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT6030SVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6030SVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT6032AVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6033BN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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