參數(shù)資料
型號: APT6033BN
廠商: Advanced Power Technology Ltd.
英文描述: N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述: N溝道增強型高壓功率MOSFET
文件頁數(shù): 3/4頁
文件大?。?/td> 51K
代理商: APT6033BN
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
D
(
-50
-25
0
25
50
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
(
R
D
(
I
D
,
(
V
0
0
50
100
150
200
250
0
2
4
6
8
10
0
2
4
6
8
10
0
10
20
30
40
50
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
75
100 125 150
-50
-25
0
25
50
75
100 125
150
APT6030/6033BN
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
20
16
12
8
4
0
40
32
24
16
8
0
24
20
16
12
8
4
0
2.5
2.0
1.5
1.0
0.5
0.0
20
16
12
8
4
0
2.50
2.00
1.50
1.00
0.50
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.4
VD250
μ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = 25
°
C
250
μ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
6V
5.5V
4.5V
5V
6.5V
VGS=10V
8V
7V
4.5V
5V
5.5V
6V
VGS=7, 8, &10V
6.5V
TJ = +125
°
C
TJ = +25
°
C
TJ = -55
°
C
TJ = -55
°
C
TJ = +25
°
C
TJ = +125
°
C
APT6030BN
APT6033BN
VGS=20V
VGS=10V
相關PDF資料
PDF描述
APT6035AVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6035BN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT6035BVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6035 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6035SVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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