參數(shù)資料
型號： APT6035BVFR
廠商： Advanced Power Technology Ltd.
英文描述： POWER MOS V FREDFET
中文描述： 功率MOS V FREDFET
文件頁數(shù)： 2/4頁
文件大小： 128K
代理商： APT6035BVFR
0
DYNAMIC CHARACTERISTICS
APT6035BVFR_SVFR
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Symbol
I
S
I
SM
V
SD
dv
/
dt
THERMAL CHARACTERISTICS
Symbol
Characteristic
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -18A)
Peak Diode Recovery
dv
/
dt 5
Reverse Recovery Time
(I
S
= -18A,
di
/
dt
= 100A/μs)
Reverse Recovery Charge
(I
S
= -18A,
di
/
dt
= 100A/μs)
Peak Recovery Current
(I
S
= -18A,
di
/
dt
= 100A/μs)
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
MIN
TYP
MAX
18
72
1.3
15
250
500
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
1.8
5.2
11
18
R
θ
JC
R
θ
JA
MIN
TYP
MAX
0.45
40
UNIT
°C/W
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
4 Starting T
j
=
+25°C, L = 7.47mH, R
G
=
25
, Peak I
L
= 18A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
≤
-
I
D
18A
di
/
≤
700A/μs
V
R
≤
600V
T
J
≤
150
°
C
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 300V
I
D
= 18A @ 25°C
V
GS
= 15V
V
DD
= 300V
I
D
= 18A @ 25°C
R
G
= 1.6
MIN
TYP
MAX
3450
403
155
140
19
4140
565
235
210
30
68
12
12
40
8
100
24
24
60
16
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Z
θ
J
,
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相關(guān)PDF資料
PDF描述
APT6035SVFR POWER MOS V FREDFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT6035BVFRG 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube
APT6035BVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6035BVRG 功能描述:MOSFET N-CH 600V 18A TO-247 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件
APT6035SVFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET
APT6035SVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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