參數(shù)資料
型號： APT6035SVFR
元件分類： JFETs
英文描述： 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： D3PAK-3
文件頁數(shù)： 4/4頁
文件大?。?/td> 121K
代理商： APT6035SVFR
050-7269
Rev
A
7-2004
APT6035BVFR_SVFR
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-247 Package Outline (BVFR)
D
3PAK Package Outline (SVFR)
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
2.40 (.094)
2.70 (.106)
(Base of Lead)
Drain (Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
1
5
10
50 100
600
.01
.1
1
10
50
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TC=+25°C
TJ=+150°C
SINGLE PULSE
100
50
10
5
1
0.5
0.1
20
16
12
8
4
0
OPERATIONHERE
LIMITEDBYRDS(ON)
TJ=+150°C
TJ =+25°C
Crss
Coss
Ciss
15,000
10,000
5,000
1,000
500
100
50
10
5
1
VDS=120V
VDS=480V
I
D = ID [Cont.]
10S
1mS
10mS
100mS
DC
100S
VDS=300V
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,TYPICALCAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,TYPICALSOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
相關PDF資料
PDF描述
APT6035BVFRG 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT6035BVFR 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT6035BVFR 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT6035SVFRG 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6038BLL 17 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
相關代理商/技術(shù)參數(shù)
參數(shù)描述
APT6035SVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6035SVRG 功能描述:MOSFET N-CH 600V 18A D3PAK RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT6037HVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6038BFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6038BFLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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