參數(shù)資料
型號: APT6040BVFR
元件分類: JFETs
英文描述: 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝: TO-247, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 150K
代理商: APT6040BVFR
050-7270
Rev
B
3-2006
Typical Performance Curves
APT6040B_SVFR(G)
I
D = 8A
V
GS = 10V
30
24
18
12
6
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30
24
18
12
6
0
30
24
18
12
6
0
16
12
8
4
0
2.5
2.0
1.5
1.0
0.5
0.0
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
4.5V
5V
VGS=6V, 7V, 10V & 15V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
4V
4.5V
5V
5.5V
4V
6V
VGS=7V,10V
VGS=15V
5.5V
NORMALIZED TO
V
GS = 10V @ 8A
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE2,TYPICALOUTPUTCHARACTERISTICS
FIGURE3,TYPICALOUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4,TYPICALTRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
50
100
150
200
250
0
5
10
15
20
25
0
2468
0
6
12
18
24
30
36
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
相關PDF資料
PDF描述
APT6040BVFR 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT6040SVFRG 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6040BVFRG 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT6040SVR 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6040BVR 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
相關代理商/技術參數(shù)
參數(shù)描述
APT6040BVFRG 功能描述:MOSFET N-CH 600V 16A TO-247 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT6040BVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V
APT6040BVRG 功能描述:MOSFET N-CH 600V 16A TO-247 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT6040DN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | CHIP
APT6040HN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 16.5A I(D) | TO-258ISO