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參數(shù)資料
| 型號： | APT6045BVFRG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 132K |
| 代理商： | APT6045BVFRG |
050-7270
Rev
A
1-2010
DYNAMIC CHARACTERISTICS
APT6045B_SVFR(G)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -15A)
Peak Diode Recovery dv/
dt
5
Reverse Recovery Time
(I
S = -15A,
di/
dt = 100A/μs)
Reverse Recovery Charge
(I
S = -15A,
di/
dt = 100A/μs)
Peak Recovery Current
(I
S = -15A,
di/
dt = 100A/μs)
Symbol
I
S
I
SM
V
SD
dv/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
MIN
TYP
MAX
15
60
1.3
15
T
j = 25°C
250
T
j = 125°C
500
T
j = 25°C
1.9
T
j = 125°C
6
T
j = 25°C
15
T
j = 125°C
26
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.50
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j = +25°C, L = 8.50mH, RG = 25Ω, Peak IL = 15A
5 dv
/
dt numbers reect the limitations of the test circuit rather than the
device itself. I
S ≤ -
I
D14A
di/
dt ≤ 700A/μs
V
R ≤ 600V
T
J ≤ 150°C
Microsemi Reserves the right to change, without notice, the specications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 15A @ 25°C
V
GS = 15V
V
DD = 300V
I
D = 15A @ 25°C
R
G = 1.6Ω
MIN
TYP
MAX
2600
3120
305
425
125
180
115
170
15
25
52
75
10
20
9
18
38
50
6
12
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6045SVFRG | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6045BVR | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT6060BNR | 13 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6070BNR | 12 A, 600 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6070BN | 12 A, 600 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6045BVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6045CVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6045HN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 15.5A I(D) | TO-258ISO |
| APT6045SVFR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS V? FREDFET |
| APT6045SVFRG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS V? FREDFET |
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