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參數(shù)資料
| 型號： | APT60GU30S |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 300 V, N-CHANNEL IGBT |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 167K |
| 代理商： | APT60GU30S |
050-7464
Rev
A
3-2004
APT60GU30B_S
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
IC
VCLAMP
100uH
VTEST
A
B
D.U.T.
DRIVER*
VCE
Figure 24, EON1 Test Circuit
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
IC
A
D.U.T.
APT15DS30
VCE
Figure 21, Inductive Switching Test Circuit
VCC
90%
Collector Current
0
90%
10%
t
f
Switching Energy
t
d(off)
TJ= 125 C
Gate Voltage
Collector Voltage
Collector Current
Collector Voltage
Gate Voltage
T
J = 125 C
5 %
5%
10%
td(on)
90%
tr
Switching Energy
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Collector (Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Collector
Emitter
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
D
3PAKPackageOutline
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT60GU30SG | 100 A, 300 V, N-CHANNEL IGBT |
| APT60GU30BG | 100 A, 300 V, N-CHANNEL IGBT, TO-247AD |
| APT60GU30S | 100 A, 300 V, N-CHANNEL IGBT |
| APT60GU30B | 100 A, 300 V, N-CHANNEL IGBT, TO-247AD |
| APT60M60JFLL | 70 A, 600 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT60M60JFLL | 功能描述:MOSFET N-CH 600V 70A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT60M60JFLL_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
| APT60M60JLL | 功能描述:MOSFET N-CH 600V 70A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT60M60JLL_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
| APT60M75 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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