- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36724 > APT60M60JFLL (MICROSEMI POWER PRODUCTS GROUP) 70 A, 600 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APT60M60JFLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 70 A, 600 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 110K |
| 代理商： | APT60M60JFLL |
050-7092
Rev
A
11-2003
APT60M60JFLL
Crss
Ciss
Coss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
600
0
10
20
30
40
50
0
50
100
150
200
250
300
350 400
0.3
0.5
0.7
0.9
1.1
1.3
1.5
280
100
50
10
5
1
16
12
8
4
0
TC=+25°C
TJ =+150°C
SINGLE PULSE
10mS
1mS
100S
TJ =+150°C
TJ =+25°C
VDS=300V
VDS=120V
VDS=480V
I
D
= 70A
40,000
10,000
1,000
100
300
100
10
1
OPERATIONHERE
LIMITEDBYRDS(ON)
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 400V
R
G
= 5
T
J
= 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
0
20406080
100
120
0
20406080
100
120
0
20
40
60
80
100
120
0
5
10
15
20
25
30
35 40
45
50
V
DD
= 400V
I
D
= 70A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
250
200
150
100
50
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
DD
= 400V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 400V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
140
120
100
80
60
40
20
0
10000
8000
6000
4000
2000
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT60M60JLL | 70 A, 600 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M60JLL | 70 A, 600 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M75JFLL | 58 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M75JFLL | 58 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M75L2FLL | 73 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT60M60JFLL_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
| APT60M60JLL | 功能描述:MOSFET N-CH 600V 70A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT60M60JLL_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
| APT60M75 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT60M75JFLL | 功能描述:MOSFET N-CH 600V 58A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。