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參數(shù)資料
| 型號(hào)： | APT60M90JN |
| 元件分類： | JFETs |
| 英文描述： | 57 A, 600 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | APT60M90JN |
MIN
TYP
MAX
APT60M90JN
57
APT60M90JN
228
1.8
800
1600
26
50
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°C
R
G
= 0.6
MIN
TYP
MAX
11670
14000
1810
2530
545
870
446
670
64
95
208
315
22
45
24
50
65
95
12
25
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current 1
(Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
UNIT
Amps
Volts
ns
C
Characteristic / Test Conditions
Internal Drain Inductance (Measured From Drain Terminal to Center of Die.)
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance (f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
UNIT
nH
Volts
pF
lbin
PACKAGE CHARACTERISTICS
Symbol
L
D
L
S
V
Isolation
C
Isolation
Torque
MIN
TYP
MAX
3
5
2500
70
13
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT60M90JN
050-6038
Rev
F
0.2
0.1
0.05
0.01
0.005
0.001
0.0005
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Z
θJC
,THERMAL
IMPEDANCE
(
°C/W)
SINGLE PULSE
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.01
0.02
0.05
0.1
0.2
D=0.5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT60N60BCS | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET |
| APT60N60BCSG | 功能描述:MOSFET N-CH 600V 60A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT60N60SCS | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT60N60SCSG | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 60A 3-Pin(2+Tab) D3PAK 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
| APT60N60SCSG/TR | 制造商:Microsemi Corporation 功能描述: 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
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