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參數(shù)資料
| 型號(hào)： | APT60N60BCS |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 60 A, 600 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 401K |
| 代理商： | APT60N60BCS |
050-7239
Rev
A
12-2005
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
D = 0.9
0.05
FINAL DATA SHEET WITH MOS 7 FORMAT
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
APT Reserves the right to change, without notice, the specications and information contained herein.
DYNAMIC CHARACTERISTICS
APT60N60B_SCS(G)
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.29
62
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as
PAV = EAR*f
3 Starting T
j = +25°C, L = 33.23mH, RG = 25, Peak IL = 11A
4 Pulse Test: Pulse width < 380s, Duty Cycle < 2%
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 5
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 400V
I
D = 44A @ 25°C
RESISTIVE SWITCHING
V
GS = 15V
V
DD = 400V
I
D = 44A @ 25°C
R
G = 3.3
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 44A, RG = 4.3
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V, VGS = 15V
I
D = 44A, RG = 4.3
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See gures 18, 20.
7 We do not recommend using this CoolMOS product in topologies
that have fee wheeling load current conducted in the body diode that is
hard commutated. The current commutation is very "snappy", resulting in
high di/dt at the completion of commutation, and the likelihood of severe
over-voltage transients due to the resulting high dv/dt.
MIN
TYP
MAX
7200
8500
290
150
190
34
50
30
20
100
10
675
1100
520
635
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 4 (V
GS = 0V, IS = -44A)
Reverse Recovery Time (I
S = -44A, dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -44A, dlS/dt = 100A/s)
Peak Diode Recovery dv/dt 7
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
44
180
1.2
600
17
4
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/
dt
THERMAL CHARACTERISTICS
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相關(guān)代理商/技術(shù)參數(shù) |
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| APT60N60BCSG | 功能描述:MOSFET N-CH 600V 60A TO-247 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT60N60SCS | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT60N60SCSG | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 60A 3-Pin(2+Tab) D3PAK 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
| APT60N60SCSG/TR | 制造商:Microsemi Corporation 功能描述: 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
| APT60N90JC3 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Super Junction MOSFET |
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