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參數(shù)資料
| 型號： | APT75GN60BDQ2G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 211K |
| 代理商： | APT75GN60BDQ2G |
050-7634
Re
v
A
11-2010
APT75GN60B_SDQ2(G)
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G
is external gate resistance, not including R
G(int)
nor gate driver impedance. (MIC4452)
8 Continuous current limited by package pin temperature to 100A.
Microsemi reserves the right to change, without notice, the specications and information contained herein.
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
MIN
TYP
MAX
.28
N/A
5.9
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
RθJC
W
T
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
SCSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 75A
T
J
= 175°C, R
G
= 4.3
Ω 7 ,V
GE
=
15V, L = 100H,V
CE
= 600V
V
CC = 600V, VGE = 15V,
T
J
= 125°C, R
G
= 4.3
Ω 7
Inductive Switching (25°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 75A
R
G
= 1.0
Ω 7
T
J
= +25°C
Inductive Switching (125°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 75A
R
G
= 1.0
Ω 7
T
J
= +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4 4
Turn-on Switching Energy (Diode)
55
Turn-off Switching Energy
66
MIN
TYP
MAX
4500
370
150
9.5
485
30
270
225
6
47
48
385
38
2500
3725
2140
47
48
430
55
2600
4525
2585
UNIT
pF
V
nC
A
s
ns
J
ns
J
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