- 您現(xiàn)在的位置：買賣IC網 > PDF目錄51270 > APT802R4KN 4.7 A, 800 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | APT802R4KN |
| 元件分類： | JFETs |
| 英文描述： | 4.7 A, 800 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | APT802R4KN |
APT802R4KN
APT802R8KN
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
790
950
pF
116
163
pF
66
pF
38
55
nC
4.5
7
nC
16
24
nC
10
20
ns
918
ns
31
47
ns
15
30
ns
DYNAMIC CHARACTERISTICS
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V, I
D
= I
D
[Cont.]
V
DD
= 0.5 V
DSS
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.], V
GS
= 15V
R
G
= 1.8
Test Conditions
TYP
UNIT
MAX
MIN
Symbol Characteristic
APT802R4/802R8KN
125
Watts
125
Watts
18.8
Amps
17.6
Amps
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec.
I
DS
= I
D
[Cont.],
V
DS
= P
D
/ I
D
[Cont.], t = 1 Sec.
Safe Operating Area
Inductive Current Clamped
SOA1
SOA2
I
LM
SAFE OPERATING AREA CHARACTERISTICS
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
APT802R4KN
4.7
Amps
APT802R8KN
4.4
Amps
APT802R4KN
18.8
Amps
APT802R8KN
17.6
Amps
1.3
Volts
160
320
640
ns
1.5
3.0
6.0
C
Symbol Characteristic / Test Conditions / Part Number
UNIT
MAX
TYP
MIN
Test Conditions / Part Number
Symbol Characteristic
MIN
TYP
MAX
UNIT
050-8036
Rev
D
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
Z
θ
JC
,THERMAL
IMPEDANCE
(
°C/W)
1.0
0.5
0.1
0.05
0.01
0.004
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
相關PDF資料 |
PDF描述 |
|---|---|
| APT8030JNFR | 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT8032LNR | 25 A, 800 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT806R5KN | 2 A, 800 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| APT80GP60JDQ3 | 151 A, 600 V, N-CHANNEL IGBT |
| APT80GP60JDQ3 | 151 A, 600 V, N-CHANNEL IGBT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT802R8AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4.5A I(D) | TO-3 |
| APT802R8BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5A I(D) | TO-247AD |
| APT802R8CN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-254ISO |
| APT802R8GN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-257ISO |
| APT802R8KN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4.4A I(D) | TO-220 |
發(fā)布緊急采購，3分鐘左右您將得到回復。