參數資料
型號: APTC60AM35SCT
元件分類: JFETs
英文描述: 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
文件頁數: 6/7頁
文件大?。?/td> 317K
代理商: APTC60AM35SCT
APTC60AM35SCT
A
PT
C
60A
M
35S
C
T
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
6 – 7
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,Re
ve
rs
e
Dra
in
Cu
rre
n
t(A)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
20406080
100 120
ID, Drain Current (A)
t d(
on)
an
d
t
d(
of
f)(n
s)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
0
204060
80
100
120
ID, Drain Current (A)
t r
an
d
t
f(n
s
)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
20
406080
100
120
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Eon
Eoff
0
2
4
6
8
10
0
5
10
15
20
25
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=400V
ID=72A
TJ=125°C
L=100H
0
20
40
60
80
100
120
140
15 20 25 30 35 40 45 50 55 60 65
ID, Drain Current (A)
F
req
ue
nc
y(
kH
z)
Operating Frequency vs Drain Current
VDS=400V
D=50%
RG=2.5
TJ=125°C
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PDF描述
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