參數(shù)資料
型號(hào)： APTC60HM70T3
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： MODULE-25
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 337K
代理商： APTC60HM70T3
APTC60HM70T3
A
P
T
C
60
H
M
70T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
600
V
VGS = 0V,VDS = 600V
Tj = 25°C
0.5
25
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
250
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 39A
70
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.7mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7
Coss
Output Capacitance
2.56
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.21
nF
Qg
Total gate Charge
259
Qgs
Gate – Source Charge
29
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 39A
111
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
283
Tf
Fall Time
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 39A
RG = 5
84
ns
Eon
Turn-on Switching Energy
670
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5
980
J
Eon
Turn-on Switching Energy
1096
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5
1206
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
39
IS
Continuous Source current
(Body diode)
Tc = 80°C
29
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 39A
1.2
V
dv/dt
Peak Diode Recovery
6
V/ns
trr
Reverse Recovery Time
Tj = 25°C
580
ns
Qrr
Reverse Recovery Charge
IS = - 39A
VR = 350V
diS/dt = 100A/s
Tj = 25°C
23
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 39A
di/dt
≤ 100A/s
VR ≤ VDSS
Tj ≤ 150°C
相關(guān)PDF資料
PDF描述
APTC60SKM24CT1G 95 A, 600 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
APTC60SKM24T1G 95 A, 600 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
APTC60TDUM35P 72 A, 600 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC60TDUM35P 72 A, 600 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC80A15SCT 28 A, 800 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTC60HM70T3G 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:*
APTC60HM83FT2G 功能描述:MOSFET N CH 600V 36A RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:10 系列:*
APTC60HM991G 制造商:Microsemi Corporation 功能描述:
APTC60SKM24CT1G 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:Microsemi APTC60SKM24CT1G MOSFETs 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V 95A SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
APTC60SKM24T1G 功能描述:MOSFET N-CH 600V 95A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:10 系列:*
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*