- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄51270 > APTC80DSK29T3 15 A, 800 V, 0.29 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APTC80DSK29T3 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 15 A, 800 V, 0.29 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 336K |
| 代理商： | APTC80DSK29T3 |
APTC80DSK29T3
AP
T
C
80
D
S
K
29T
3
–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
800
V
VGS = 0V,VDS = 800V
Tj = 25°C
25
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
250
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 7.5A
290
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
2254
Coss
Output Capacitance
1046
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
54
pF
Qg
Total gate Charge
90
Qgs
Gate – Source Charge
11
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 15A
45
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
13
Td(off)
Turn-off Delay Time
83
Tf
Fall Time
Inductive switching @125°C
VGS = 15V
VBus = 533V
ID = 15A
RG = 5
35
ns
Eon
Turn-on Switching Energy
243
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 15A, RG = 5
139
J
Eon
Turn-on Switching Energy
425
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 15A, RG = 5
171
J
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1000
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1000V
Tj = 125°C
750
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
30
A
IF = 30A
1.9
2.3
IF = 60A
2.2
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.7
V
Tj = 25°C
290
trr
Reverse Recovery Time
Tj = 125°C
390
ns
Tj = 25°C
670
Qrr
Reverse Recovery Charge
IF = 30A
VR = 667V
di/dt=200A/s
Tj = 125°C
2350
nC
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTC80TDU15P | 28 A, 800 V, 0.15 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC80TDU15P | 28 A, 800 V, 0.15 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC90DDA12T1G | 30 A, 900 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC90VDA12T1G | 30 A, 900 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTCV60TLM991G | 50 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTC80DSK29T3G | 功能描述:MOSFET MOD DUAL BUCK CHOP SP3 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC80H15T1G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP1 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC80H15T3G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC80H29SCT | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module |
| APTC80H29SCTG | 功能描述:MOSFET PWR MOD FULL BRIDGE SP4 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。