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參數(shù)資料
| 型號(hào)： | APTC80H15T3G |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Super Junction MOSFET Power Module |
| 中文描述： | 全-橋超級(jí)結(jié)MOSFET的功率模塊 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 348K |
| 代理商： | APTC80H15T3G |
APTC80H15T3G
A
P
T
C
80
H
15T
3G
–
R
ev
1
D
ecem
be
r,
2005
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
n
c
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t
(A
)
VGS=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
20
40
60
80
100
012345678
VGS, Gate to Source Voltage (V)
I D
,D
ra
in
C
u
rr
e
nt
(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
10
203040
5060
ID, Drain Current (A)
R
DS
(o
n
)
D
rai
n
t
o
S
o
u
rce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 14A
0
5
10
15
20
25
30
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
Dr
a
in
C
u
rr
e
n
t(
A
)
DC Drain Current vs Case Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| APTC80H29SCT | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module |
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| APTC80H29T1G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP1 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC80H29T3 | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTC80H29T3G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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