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參數(shù)資料
| 型號： | APTC80H29T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 800 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 324K |
| 代理商： | APTC80H29T1G |
APTC80H29T1G
APT
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80H29T1G
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0
A
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007
www.microsemi.com
4 – 6
Typical performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
er
m
al
I
m
pe
da
nc
e(
°C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,Dr
ai
n
Cu
rr
ent
(A
)
VGS=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=25°C
TJ=125°C
0
10
20
30
40
50
012
3
456
78
VGS, Gate to Source Voltage (V)
I D
,Drai
n
Cu
rr
ent
(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
5
10
15
20
25
30
ID, Drain Current (A)
R
DS
(o
n)
Dr
ai
n
t
o
So
u
rce
ON
Resi
st
an
ce
Normalized to
VGS=10V @ 7.5A
0
2
4
6
8
10
12
14
16
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
Dr
ai
n
Cu
rr
ent
(A)
DC Drain Current vs Case Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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