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參數(shù)資料
| 型號： | APTC80TDU15P |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Triple dual Common Source Super Junction MOSFET Power Module |
| 中文描述： | 三雙共源超結MOSFET的功率模塊 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 339K |
| 代理商： | APTC80TDU15P |
APTC80TDU15P
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APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 375A
800
V
VGS = 0V,VDS = 800V
Tj = 25°C
50
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
375
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 14A
150
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4507
Coss
Output Capacitance
2092
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
108
pF
Qg
Total gate Charge
180
Qgs
Gate – Source Charge
22
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 28A
90
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
13
Td(off)
Turn-off Delay Time
83
Tf
Fall Time
Inductive switching @125°C
VGS = 15V
VBus = 533V
ID = 28A
RG = 2.5
35
ns
Eon
Turn-on Switching Energy
486
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5
278
J
Eon
Turn-on Switching Energy
850
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5
342
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
28
IS
Continuous Source current
(Body diode)
Tc = 80°C
21
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 28A
1.2
V
dv/dt
Peak Diode Recovery
6
V/ns
trr
Reverse Recovery Time
Tj = 25°C
550
ns
Qrr
Reverse Recovery Charge
IS = - 28A
VR = 400V
diS/dt = 200A/s
Tj = 25°C
30
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 28A
di/dt
≤ 200A/s
VR ≤ VDSS
Tj ≤ 150°C
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