參數(shù)資料
型號(hào): APTC90DDA12T1G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 30 A, 900 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SP1, 12 PIN
文件頁(yè)數(shù): 6/6頁(yè)
文件大小: 225K
代理商: APTC90DDA12T1G
APTC90DDA12T1G
APT
C
90DDA12T1G
Rev
0
August,
200
9
www.microsemi.com
6 – 6
Typical Chopper diode performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Ther
m
a
lI
m
pedance
(
°C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
20
40
60
80
0.0
1.0
2.0
3.0
4.0
VF, Anode to Cathode Voltage (V)
I F
,
F
o
rward
C
u
rren
t(A
)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
15 A
30 A
45 A
0
100
200
300
400
500
0
200
400
600
800 1000 1200
-diF/dt (A/s)
t rr
,Reve
rse
Recovery
T
im
e
(ns)
TJ=125°C
VR=800V
QRR vs. Current Rate Charge
15 A
30 A
45 A
0
1
2
3
4
0
200
400
600
800
1000 1200
-diF/dt (A/s)
Q
RR
,R
everse
R
ecovery
Charge
(
C
)
TJ=125°C
VR=800V
IRRM vs. Current Rate of Charge
15 A
30 A
45 A
0
5
10
15
20
25
30
0
200
400
600
800 1000 1200
-diF/dt (A/s)
I RRM
,
Reverse
R
ecovery
C
u
rr
ent
(A)
TJ=125°C
VR=800V
Capacitance vs. Reverse Voltage
0
40
80
120
160
200
1
10
100
1000
VR, Reverse Voltage (V)
C,
Capa
ci
ta
nce
(
pF)
0
10
20
30
40
50
25
50
75
100
125
150
175
Case Temperature (C)
I F
(A
V
)(A
)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
TJ=175°C
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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