參數(shù)資料
型號: APTCV60TLM45T3G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 100 A, 600 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT PACKAGE-32
文件頁數(shù): 3/11頁
文件大小: 281K
代理商: APTCV60TLM45T3G
APTCV60TLM45T3G
APT
C
V60T
LM
45T
3G
Rev
0
Mar
ch,
2009
www.microsemi.com
11 - 11
CR2, CR3, CR7 & CR8 Typical performance curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
The
rm
a
lIm
p
e
da
nc
e
(
°C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
20
40
60
80
0.0
1.0
2.0
3.0
4.0
VF, Anode to Cathode Voltage (V)
I F
,Forwa
rd
Current
(A)
Forward Current vs Forward Voltage
Energy losses vs Collector Current
0
0.5
1
1.5
2
2.5
0
20
406080
IC (A)
E
(
m
J
)
VCE = 800V
VGE = 15V
RG = 5
TJ = 125°C
0.6
0.8
1
1.2
1.4
1.6
1.8
010
20
30
Gate resistance (ohms)
E
(
m
J
)
Switching Energy Losses vs Gate Resistance
VCE = 800V
VGE =15V
IC = 30A
TJ = 125°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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