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參數(shù)資料
| 型號： | APTGF15A120T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 25 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 315K |
| 代理商： | APTGF15A120T1G |
APTGF15A120T1G
APTG
F15A120T1G
–
R
ev
0
A
ugus
t,200
7
www.microsemi.com
5 – 6
VGE = 15V
50
55
60
65
70
75
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
td
(on),
Tu
rn-On
De
la
yTime
(ns
)
Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 33
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
t
d
(o
ff
),
T
u
rn
-O
ff
De
la
y
T
im
e
(
n
s)
VCE = 600V
RG = 33
VGE=15V
0
40
80
120
160
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
tr
,R
ise
T
im
e
(n
s)
Current Rise Time vs Collector Current
VCE = 600V
RG = 33
TJ = 25°C
TJ = 125°C
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
tf
,Fa
ll
Ti
me
(
n
s)
Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 33
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
Eon,
Turn-
On
Ene
rgy
Los
s
(m
J)
VCE = 600V
RG = 33
TJ = 25°C
TJ = 125°C
0
0.5
1
1.5
2
2.5
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
E
o
ff
,Turn-
of
f
E
n
er
gy
Los
s(
m
J)
Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
RG = 33
Eon, 15A
Eoff, 15A
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
120
Gate Resistance (Ohms)
S
w
it
c
h
in
g
E
n
erg
y
L
o
sses
(
m
J)
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE = 15V
TJ= 125°C
0
5
10
15
20
25
30
35
0
400
800
1200
I C
,C
o
ll
ect
o
rC
u
rren
t
(A
)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF15H120T1G | 功能描述:IGBT MODULE NPT FULL BRIDGE SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF15H120T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge NPT IGBT Power Module |
| APTGF15H120T3G | 功能描述:IGBT MODULE NPT FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF15X120E2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF15X120E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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