參數(shù)資料
型號： APTGF15H120T3
元件分類： IGBT 晶體管
英文描述： 25 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-25
文件頁數(shù)： 2/6頁
文件大?。?/td> 320K
代理商： APTGF15H120T3
APTGF15H120T3
A
P
T
G
F
15
H
120T
3–
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ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
1200
V
Tj = 25°C
1
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
1
mA
Tj = 25°C
2.5
3.2
3.7
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 15A
Tj = 125°C
4.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 1mA
4
6
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
1000
Coes
Output Capacitance
150
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
70
pF
Qg
Total gate Charge
99
Qge
Gate – Emitter Charge
10
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 300V
IC =15A
70
nC
Td(on)
Turn-on Delay Time
60
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
315
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 15A
RG = 33
30
ns
Td(on)
Turn-on Delay Time
60
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
356
Tf
Fall Time
40
ns
Eon
Turn-on Switching Energy
2
Eoff
Turn-off Switching Energy
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 15A
RG = 33
1
mJ
Eon includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
15
A
Tj = 25°C
2.9
3.4
VF
Diode Forward Voltage
IF = 15A
VGE = 0V
Tj = 125°C
2.6
V
trr
Reverse Recovery Time
Tj = 125°C
0.5
s
Tj = 25°C
0.4
Qrr
Reverse Recovery Charge
IF = 15A
VR = 600V
di/dt =400A/s
Tj = 125
1.2
C
相關(guān)PDF資料
PDF描述
APTGF15H120T3 25 A, 1200 V, N-CHANNEL IGBT
APTGF15X120P2 25 A, 1200 V, N-CHANNEL IGBT
APTGF15X120P2G 25 A, 1200 V, N-CHANNEL IGBT
APTGF15X120E2 25 A, 1200 V, N-CHANNEL IGBT
APTGF15X120P2 25 A, 1200 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGF15H120T3G 功能描述:IGBT MODULE NPT FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGF15X120E2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module
APTGF15X120E2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF15X120P2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module
APTGF15X120P2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
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