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參數(shù)資料
| 型號： | APTGF200U120DG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 275 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP6, MODULE-5 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 266K |
| 代理商： | APTGF200U120DG |
APTGF200U120DG
A
P
T
G
F
200
U
120D
G
–
R
ev
1
J
ul
y,
2006
www.microsemi.com
6 – 6
0
50
100
150
200
250
300
350
400
450
0
400
800
1200
I C
,Co
lle
ct
o
rCu
rr
en
t(
A
)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Th
er
m
al
I
m
pe
da
nc
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
20
60
100
140
180
220
IC, Collector Current (A)
Operating Frequency vs Collector Current
F
m
ax,
O
p
er
at
in
g
F
req
u
en
cy
(
z)
VCE = 600V
D = 50%
RG = 1.2
TJ = 125°C
TC= 75°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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