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參數(shù)資料
| 型號： | APTGF25DSK120T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, MODULE-25 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 289K |
| 代理商： | APTGF25DSK120T3G |
APTGF25DSK120T3G
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120
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J
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2006
www.microsemi.com
5 - 6
VGE = 15V
50
55
60
65
70
75
5
15
25354555
ICE, Collector to Emitter Current (A)
td
(on)
,Tur
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O
n
D
el
ay
T
im
e(
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s)
Turn-On Delay Time vs Collector Current
V
CE = 600V
R
G = 22
V
GE=15V,
T
J=25°C
V
GE=15V,
T
J=125°C
200
250
300
350
400
5
1525354555
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
t
d
(o
ff
),
Tur
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O
ff
D
el
ay
Ti
m
e
(
n
s)
V
CE = 600V
RG = 22
V
GE=15V
0
40
80
120
160
5
1525
3545
55
ICE, Collector to Emitter Current (A)
tr
,R
ise
T
im
e(n
s
)
Current Rise Time vs Collector Current
V
CE = 600V
R
G = 22
T
J = 25°C
TJ = 125°C
20
25
30
35
40
45
50
5
1525
3545
55
ICE, Collector to Emitter Current (A)
tf
,Fa
ll
Ti
m
e
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s)
Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 22
T
J=25°C,
VGE=15V
T
J=125°C,
VGE=15V
0
2
4
6
8
10
5
15253545
55
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
E
on,
Tur
n-
O
n
E
n
er
gy
Los
s(
m
J)
V
CE = 600V
R
G = 22
TJ = 25°C
T
J = 125°C
0
1
2
3
4
5
1525354555
ICE, Collector to Emitter Current (A)
E
o
ff
,Tur
n-
of
fE
n
er
gy
Los
s(
m
J
)
Turn-Off Energy Loss vs Collector Current
V
CE = 600V
VGE = 15V
R
G = 22
Eon, 25A
Eoff, 25A
0
1
2
3
4
5
0
102030405060
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
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y
L
o
sses
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J)
Switching Energy Losses vs Gate Resistance
VCE = 600V
V
GE = 15V
T
J= 125°C
0
10
20
30
40
50
60
0
400
800
1200
I C
,C
o
lle
c
to
rC
u
rr
en
t(
A
)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF25H120T1G | 功能描述:POWER MOD IGBT NPT FULL BRDG SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF25H120T2G | 制造商:Microsemi Corporation 功能描述:MOD IGBT NPT 1200V 40V SP2 |
| APTGF25H120T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge NPT IGBT Power Module |
| APTGF25H120T3G | 功能描述:IGBT MODULE NPT FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF25H120T3G_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Full - Bridge NPT IGBT Power Module |
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