參數(shù)資料
型號(hào): APTGF350DU60
廠商: Advanced Power Technology Ltd.
英文描述: Dual common source NPT IGBT Power Module
中文描述: 雙共源不擴(kuò)散核武器條約IGBT功率模塊
文件頁數(shù): 1/6頁
文件大小: 298K
代理商: APTGF350DU60
APTGF350DU60
A
APT website – http://www.advancedpower.com
1 - 6
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
600
430
350
1225
±20
1562
1225A @ 600V
Unit
V
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
T
c
= 25°C
T
j
= 150°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
A
V
W
C2
C1
E
E1
G1
G2
E2
V
CES
= 600V
I
C
= 350A @ Tc = 80°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Non Punch Through (NPT) THUNDERBOLT IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Dual common source
NPT IGBT Power Module
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相關(guān)代理商/技術(shù)參數(shù)
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