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參數(shù)資料
| 型號： | APTGF50X120E3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | 3 Phase bridge NPT IGBT Power Module |
| 中文描述： | 3相橋不擴散核武器條約IGBT功率模塊 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 178K |
| 代理商： | APTGF50X120E3 |
APTGF50X120E3
A
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
All ratings @ T
j
= 25°C unless otherwise specified
Test Conditions
V
GE
= 0V, I
C
= 3mA
T
j
= 25°C
Zero Gate Voltage Collector Current
V
CE
= 1200V
V
GE
=15V
I
C
= 50A
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 2 mA
Gate – Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
Min
1200
2.0
4.5
Typ
0.8
4
2.5
3.1
Max
1
3.0
3.7
6.5
200
Unit
V
I
CES
V
GE
= 0V
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
mA
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
Reverse diode ratings and characteristics
Symbol Characteristic
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 50A
R
G
= 22
Min
Typ
3300
500
220
44
56
380
70
Max
Unit
pF
ns
Test Conditions
I
F
= 50A
V
GE
= 0V
I
F
= 50A
V
R
= 600V
di/dt =800A/μs
I
F
= 50A
V
= 600V
di/dt =800A/μs T
j
= 125°C
Min
Typ
2.3
1.8
Max
2.8
Unit
T
j
= 25°C
T
j
= 125°C
V
F
Diode Forward Voltage
V
t
rr
Reverse Recovery Time
T
j
= 125°C
200
ns
T
j
= 25°C
2.8
Q
rr
Reverse Recovery Charge
8
μC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
0.35
0.7
Unit
IGBT
Diode
R
thJC
Junction to Case
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque Mounting torque
Wt
Package Weight
2500
V
T
J
T
STG
T
C
-40
-40
-40
3
150
125
125
4.5
300
°C
To Heatsink
M5
N.m
g
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF50X120E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X120P2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X120TE3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X120TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60BTP3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
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